About: Dangling bond   Sponge Permalink

An Entity of Type : owl:Thing, within Data Space : 134.155.108.49:8890 associated with source dataset(s)

When a metal is deposited on silicon, these dangling bonds give rise to interface states within the energy band gap of silicon. The interface Fermi energy is pinned by these interface states, making the Schottky barrier height independent of the metal work function and primarily controlled by the interface states. This is the most commonly encountered difficulty in fabricating a semiconductor-metal ohmic contact. To make such a junction ohmic we will have to resort to doping the semiconductor, which would result in the thinning down of the energy barrier at the interface and consequently allowing for tunneling. It should be however noted that the resistance of such a junction is fairly high because electrons have to tunnel through the thinned Schottky barrier.

AttributesValues
rdfs:label
  • Dangling bond
rdfs:comment
  • When a metal is deposited on silicon, these dangling bonds give rise to interface states within the energy band gap of silicon. The interface Fermi energy is pinned by these interface states, making the Schottky barrier height independent of the metal work function and primarily controlled by the interface states. This is the most commonly encountered difficulty in fabricating a semiconductor-metal ohmic contact. To make such a junction ohmic we will have to resort to doping the semiconductor, which would result in the thinning down of the energy barrier at the interface and consequently allowing for tunneling. It should be however noted that the resistance of such a junction is fairly high because electrons have to tunnel through the thinned Schottky barrier.
sameAs
dcterms:subject
dbkwik:gravity/pro...iPageUsesTemplate
abstract
  • When a metal is deposited on silicon, these dangling bonds give rise to interface states within the energy band gap of silicon. The interface Fermi energy is pinned by these interface states, making the Schottky barrier height independent of the metal work function and primarily controlled by the interface states. This is the most commonly encountered difficulty in fabricating a semiconductor-metal ohmic contact. To make such a junction ohmic we will have to resort to doping the semiconductor, which would result in the thinning down of the energy barrier at the interface and consequently allowing for tunneling. It should be however noted that the resistance of such a junction is fairly high because electrons have to tunnel through the thinned Schottky barrier. Intrinsic defects at Si-SiO2 interfaces are important in the operation of metal-oxide-semiconductor devices. Unsaturated dangling bonds, generically referred to as Pb-type centers, occur at the interface between the Si substrate and the oxide and are detected by ESR techniques. The proper Pb center is found at (111) interfaces, while two distinct defects, referred to as Pb0 and Pb1, are distinguished at (100) interfaces. The Pb center has a clear microscopic characterization as an isolated sp3 dangling bond of the substrate pointing into the (111) direction, orthogonal to the interface.
Alternative Linked Data Views: ODE     Raw Data in: CXML | CSV | RDF ( N-Triples N3/Turtle JSON XML ) | OData ( Atom JSON ) | Microdata ( JSON HTML) | JSON-LD    About   
This material is Open Knowledge   W3C Semantic Web Technology [RDF Data] Valid XHTML + RDFa
OpenLink Virtuoso version 07.20.3217, on Linux (x86_64-pc-linux-gnu), Standard Edition
Data on this page belongs to its respective rights holders.
Virtuoso Faceted Browser Copyright © 2009-2012 OpenLink Software